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IRFP31N50L, SiHFP31N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 58 100 Single
D
FEATURES
500 0.15
* Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications * Lower Gate Charge Results in Simpler Drive Requirements
Available
RoHS*
COMPLIANT
* Enhanced dV/dt Capabilities Offer Improved Ruggedness * Higher Gate Voltage Threshold Offers Improved Noise Immunity * Lead (Pb)-free Available
TO-247
APPLICATIONS
G S D G S N-Channel MOSFET
* Zero Voltage Switching SMPS * Telecom and Server Power Supplies * Uninterruptible Power Supplies * Motor Control Applications
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-247 IRFP31N50LPbF SiHFP31N50L-E3 IRFP31N50L SiHFP31N50L
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw TC = 25 C EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM LIMIT 500 30 31 20 124 3.7 460 31 46 460 19 - 55 to + 150 300d 10 1.1 W/C mJ A mJ W V/ns C lbf * in N*m A UNIT V
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 C, L = 1 mH, RG = 25 , IAS = 31 A (see fig. 12). c. ISD 31 A, dI/dt 422 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91220 S-81274-Rev. A, 16-Jun-08 www.vishay.com 1
IRFP31N50L, SiHFP31N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.24 MAX. 40 0.26 UNIT C/W
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Effective Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Current IS ISM VSD trr Qrr IRRM MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT V V/C V nA A mA S
VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Coss Coss eff. Coss eff. (ER) Qg Qgs Qgd rG td(on) tr td(off) tf
VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 30 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 19 Ab VDS = 50 V, ID = 19 Ab
500 3.0 15 -
0.28 0.15 5000 553 59 6630 155 276 200 1.1 28 115 54 53
5.0 100 50 2.0 0.18 210 58 100 -
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VDS = 1.0 V , f = 1.0 MHz VGS = 0 V VDS = 400 V , f = 1.0 MHz VDS = 0 V to 400 Vc
pF
VGS = 10 V
ID = 31 A, VDS = 400 V, see fig. 7 and 13b
nC
f = 1 MHz, open drain
VDD = 250 V, ID = 31 A, RG = 4.3 , see fig. 10b
ns
-
170 220 570 1.2 7.9
31 A 124 1.5 250 330 860 1.8 12 V ns nC C A
G
S
TJ = 25 C, IS = 31 A, VGS = 0 TJ = 25 C, IF = 31 A
Vb
-
TJ = 125 C, dI/dt = 100 A/sb TJ = 25 C, IS = 31 A, VGS = 0 Vb TJ = 125 C, dI/dt = 100 A/sb TJ = 25 C
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Forward Turn-On Time ton Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80 % VDS. www.vishay.com 2 Document Number: 91220 S-81274-Rev. A, 16-Jun-08
IRFP31N50L, SiHFP31N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
100
Top VGS 15 V 12 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V
1000
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
Bottom
100 TJ = 150 C
10
10
1 5.0 V 0.1 20 s PULSE WIDTH TJ = 25 C 100 10
TJ = 25 C 1
0.01 0.1
0.1 4 5
VDS = 50 V 20 s PULSE WIDTH 6 9 8 7 VGS, Gate-to-Source Voltage (V) 10 11
1
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
100
Top
RDS(on), Drain-to-Source On Resistance (Normalized)
3.0
ID, Drain-to-Source Current (A)
10
Bottom
VGS 15 V 12 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V
ID = 31 A
2.5
2.0
1
5.0 V
1.5
1.0
0.1
0.5 VGS = 10 V 20 40 60 80 100 120 140 160
0.01 0.1
20 s PULSE WIDTH TJ = 25 C 10 1 VDS, Drain-to-Source Voltage (V) 100
0.0 - 60 - 40 - 20 0
TJ, Junction Temperature
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91220 S-81274-Rev. A, 16-Jun-08
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IRFP31N50L, SiHFP31N50L
Vishay Siliconix
20 VGS = 0 V, Ciss = Cgs + Cgd, Cds Crss = Cgd Coss = Cds + Cgd f = 1 MHz SHORTED VGS, Gate-to-Source Voltage (V) 12 ID = 31 A VDS = 400 V VDS = 250 V VDS = 100 V
10000000
1000000 C, Capacitance (pF)
10000 Ciss 1000 Coss 100 Crss 10 1 10 100 1000 VDS, Drain-to-Source Voltage (V)
8
4
0 0 120 40 80 QG, Total Gate Charge (nC) 160
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
30
1000
25 ISD, Reverse Drain Current (A) 100 TJ = 150 C 10
20 Energy (s)
15
10
TJ = 25 C 1
5
0 0 100 200 300 400 500 600 VDS, Drain-to-Source Voltage (V)
0.1 0.2
VGS = 0 V 1.4 1.0 0.6 VSD, Source-to-Drain Voltage (V) 1.8
Fig. 6 - Output Capacitance Stored Energy vs. VDS
Fig. 8 - Typical Source Drain Diode Forward Voltage
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Document Number: 91220 S-81274-Rev. A, 16-Jun-08
IRFP31N50L, SiHFP31N50L
Vishay Siliconix
RD
35
VGS RG
VDS D.U.T. + - VDD 10 V
Pulse width 1 s Duty factor 0.1 %
30 25 20 15 10
ID, Drain Current (A)
Fig. 10a - Switching Time Test Circuit
VDS 90 %
5 0 25 10 % VGS td(on) tr td(off) tf
50
75
100
125
150
TC, Case Temperature (C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
1
Thermal Response (ZthJC)
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01
PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t1/ t2 2. Peak TJ = PDM x ZthJC + TC
0.01
0.001 0.00001
0.0001
0.001
0.01
0.1
1
t 1, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15 V
VDS tp
VDS
L
Driver
RG 20 V tp
D.U.T IAS 0.01
+ A - VDD
A
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91220 S-81274-Rev. A, 16-Jun-08
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IRFP31N50L, SiHFP31N50L
Vishay Siliconix
1000
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
EAS, Single Pulse Avalanche Energy (mJ)
800
ID 14A 20A BOTTOM 30A TOP
ID, Drain Current (A)
100
10us
600
100us
400
10
1ms 10ms
1
TC = 25 C TJ = 150 C Single Pulse
10 100
200
1000
0
25
50
75
100
125
150
VDS, Drain-to-Source Voltage (V)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Starting TJ, Junction Temperature(C)
Fig. 12d - Gate Charge Test Circuit
Current regulator Same type as D.U.T. QG
12 V 0.2 F 0.3 F 50 k
VGS QGS
QGD D.U.T.
+ -
VDS
VG
VGS
3 mA
Charge
IG ID Current sampling resistors
Fig. 13a - Maximum Safe Operating Area
Fig. 13b - Basic Gate Charge Waveform
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Document Number: 91220 S-81274-Rev. A, 16-Jun-08
IRFP31N50L, SiHFP31N50L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T
+
Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer
+ +
-
RG
* * * *
dV/dt controlled by R G Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test
+ VDD
Driver gate drive P.W. Period D=
P.W. Period VGS = 10 V*
D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
VDD
Re-applied voltage Inductor current
Body diode forward drop
Ripple 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91220.
Document Number: 91220 S-81274-Rev. A, 16-Jun-08
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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